Surface Recombination in Semiconductors

Probing surface recombination velocities in semiconductors using two-photon microscopy.

The determination of minority-carrier lifetimes and surface recombination velocities is essential for the development of semiconductor technologies such as solar cells. The recent development of two-photon time-resolved microscopy allows for better measurements of bulk and subsurface interfaces properties. Here we analyze the diffusion problem related to this optical technique. Our three-dimens...

CHAPTER 2 Generation - Recombination Noise in Semiconductors

Trap-assisted recombination in disordered organic semiconductors.

The trap-assisted recombination of electrons and holes in organic semiconductors is investigated. The extracted capture coefficients of the trap-assisted recombination process are thermally activated with an identical activation energy as measured for the hole mobility μ(p). We demonstrate that the rate limiting step for this mechanism is the diffusion of free holes towards trapped electrons in...

Photon-number-squeezed recombination radiation in semiconductors

We recently reported the generation of cw photon-numbersqueezed (sub-Poisson) light from a Franck-Hertz experiment in which Hg vapor was excited by inelastic collisions with a space-charge-limited (quiet) electron beam.' The experiment operates by transferring the anticlustering properties of the electrons, resulting from Coulomb repulsion, to the photons. The direction of transfer is the inver...

Analysis and modelling of generation–recombination noise in amorphous semiconductors

We examine several analytical models with different predictions for noise associated with conductivity fluctuations in homogeneous thin film semiconductors. In one model, the noise spectrum is assumed to reflect separately the release times of groups of trapping centres in the material. In another, the trapping time into the whole distribution of traps is assumed to dominate, predicting that, i...